发明授权
- 专利标题： Semiconductor device and method for fabricating the same
- 专利标题（中）： 包括具有β晶体结构的层的半导体器件
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申请号： US10036388申请日： 2002-01-07
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公开(公告)号： US06770977B2公开(公告)日： 2004-08-03
- 发明人: Takenobu Kishida , Shinya Tada , Atsushi Ikeda , Takeshi Harada , Kohei Sugihara
- 申请人： Takenobu Kishida , Shinya Tada , Atsushi Ikeda , Takeshi Harada , Kohei Sugihara
- 优先权： JP2001-178107 20010613
- 主分类号： H01L2348
- IPC分类号： H01L2348
摘要：
A barrier layer is formed on an insulating or conducting film provided on a semiconductor substrate, and an electrode or an interconnect made from a conducting film is formed on the barrier layer. The barrier layer includes a tantalum film having the &bgr;-crystal structure.
公开/授权文献
- US20020190352A1 Semiconductor device and method for fabricating the same 公开/授权日：2002-12-19
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