摘要:
An element carrier has a mounting surface where at least one element outputting a high-frequency signal is disposed. A first dielectric layer has a first side surface partially forming the mounting surface and a first main surface connecting to the first side surface and extending in an intersecting direction intersecting with the mounting surface. A first wiring pattern is provided on the first main surface and extends from the first side surface. A second dielectric layer has a second side surface partially forming the mounting surface and a second main surface connecting to the second side surface and extending in the intersecting direction, and is provided on a part of the first main surface of the first dielectric layer where the first wiring pattern is provided. A second wiring pattern is provided on the second main surface of the second dielectric layer and extends from the second side surface.
摘要:
A technique enabling to improve element isolation characteristic of a semiconductor device is provided. An element isolation structure is provided in a semiconductor substrate in which a silicon layer, a compound semiconductor layer and a semiconductor layer are laminated in this order. The element isolation structure is composed of a trench, a semiconductor film, and first and second insulating films. The trench extends through the semiconductor layer and extends to the inside of the compound semiconductor layer. The semiconductor film is provided on the surface of the trench, and the first insulating film is provided on the semiconductor film. The second insulting film is provided on the first insulating film and fills the trench. Since the semiconductor film is interposed between the compound semiconductor film which is exposed by the trench and the first insulating film, there is no possibility that the compound semiconductor layer is directly thermally oxidized even if the semiconductor film is thermally oxidized to form the first insulating film.
摘要:
Source and drain regions include regions of an epitaxial silicon film on the surface of the substrate and regions in the substrate. The depth of junctions of the source and drain regions is identical to or shallower than the depth of junctions of extension regions. As a result, even if the thickness of the side wall layer is reduced, since the depletion layer of the extension regions with lower impurity concentration compared with the source and drain regions is predominant, the short channel effect has a smaller effect.
摘要:
A barrier layer is formed on an insulating or conducting film provided on a semiconductor substrate, and an electrode or an interconnect made from a conducting film is formed on the barrier layer. The barrier layer includes a tantalum film having the β-crystal structure.
摘要:
An optical transmission apparatus in which, even if a change is made in the bit rate of modulation signals that are inputted to a plurality of optical modulating units, the modulation signals do not suffer from phase shifting, thereby enabling achieving synchronous modulation in the plurality of optical modulating units and enabling achieving a high optical signal quality. The optical transmission apparatus includes: a plurality of optical modulating units that modulate light on the basis of modulation signals; and a delay amount control unit that, based on bit rate information indicating a bit rate of the modulation signals, controls delay amounts of the modulation signals to be inputted to the plurality of optical modulating units, such that the light is modulated in a synchronous manner in the plurality of optical modulating units.
摘要:
When a dummy sidewall and source and drain regions are once formed and then the dummy sidewall is removed to extend the source and drain regions, the removal of the dummy sidewall is performed after formation of a protective oxide film on a gate electrode and on the major surfaces of the source and drain regions. This efficiently prevents conventional surface roughness of the upper surface of the gate electrode and the impurity region due to the removal of the dummy sidewall.
摘要:
A field-effect transistor including a gate electrode, silicon layers, and source and drain regions at a surface of a silicon substrate. Sidewall insulating films on the opposite side surfaces of the gate electrode are located between the gate electrode and the silicon layers and contain respective voids.
摘要:
A method of producing a semiconductor device includes forming a gate electrode on a channel region on a surface of a semiconductor region of a semiconductor substrate, the channel region having a depth in the semiconductor substrate; forming a first pair of side wall spacers on opposite sides of the gate electrode; forming elevated semiconductor layers, each elevated semiconductor layer being elevated relative to the channel region, on regions outside of the pair of side wall spacers and in which source and drain regions of a first conductivity type are to be formed; removing the pair of first side wall spacers; and forming a pair of pocket injection regions of a second conductivity type by introducing, after the side wall spacers are removed, a dopant impurity producing the second conductivity type deeper in the semiconductor substrate than a region where the side wall spacers were formed, the pair of pocket injection regions respectively covering only a neighborhood of respective side surface parts of the channel region, where the source and drain regions are to be formed, forming respective pn junctions only between the neighborhood of the side surface parts and the pocket injection regions.
摘要:
When a dummy sidewall and source and drain regions are once formed and then the dummy sidewall is removed to extend the source and drain regions, the removal of the dummy sidewall is performed after formation of a protective oxide film on a gate electrode and on the major surfaces of the source and drain regions. This efficiently prevents conventional surface roughness of the upper surface of the gate electrode and the impurity region due to the removal of the dummy sidewall.
摘要:
A barrier layer is formed on an insulating or conducting film provided on a semiconductor substrate, and an electrode or an interconnect made from a conducting film is formed on the barrier layer. The barrier layer includes a tantalum film having the β-crystal structure.