发明授权
US06770978B2 Metal line, method for fabricating the metal line, thin film transistor employing the metal line and display device
有权
金属线,制造金属线的方法,采用金属线的薄膜晶体管和显示装置
- 专利标题: Metal line, method for fabricating the metal line, thin film transistor employing the metal line and display device
- 专利标题(中): 金属线,制造金属线的方法,采用金属线的薄膜晶体管和显示装置
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申请号: US09795832申请日: 2001-02-28
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公开(公告)号: US06770978B2公开(公告)日: 2004-08-03
- 发明人: Yoshihiro Izumi , Yoshimasa Chikama , Satoshi Kawashima , Takaharu Hashimoto
- 申请人: Yoshihiro Izumi , Yoshimasa Chikama , Satoshi Kawashima , Takaharu Hashimoto
- 优先权: JP2000-053809 20000229
- 主分类号: H01L2348
- IPC分类号: H01L2348
摘要:
There is provided is a metal line structure in which no defect of blistering occurs on a surface of a Cu/Ni film or a Cu/Au/Ni film even if an Ni plating thickness is reduced. According to this metal line 1, in a Cu/Au/Ni film structure in which an Au film 13 and a Cu film 15 are successively laminated by electroless plating on an Ni film 12 formed by electroless plating, the Ni film 12 has a phosphorus content x of 10 wt %≦x≦15 wt %. It was discovered through experiments that the so-called high phosphorus content type Ni film 12 having a phosphorus content x of 10 to 15 percent by weight became a fine smooth film under a condition of a film thickness of 0.1 &mgr;m or greater.
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