发明授权
US06770978B2 Metal line, method for fabricating the metal line, thin film transistor employing the metal line and display device 有权
金属线,制造金属线的方法,采用金属线的薄膜晶体管和显示装置

Metal line, method for fabricating the metal line, thin film transistor employing the metal line and display device
摘要:
There is provided is a metal line structure in which no defect of blistering occurs on a surface of a Cu/Ni film or a Cu/Au/Ni film even if an Ni plating thickness is reduced. According to this metal line 1, in a Cu/Au/Ni film structure in which an Au film 13 and a Cu film 15 are successively laminated by electroless plating on an Ni film 12 formed by electroless plating, the Ni film 12 has a phosphorus content x of 10 wt %≦x≦15 wt %. It was discovered through experiments that the so-called high phosphorus content type Ni film 12 having a phosphorus content x of 10 to 15 percent by weight became a fine smooth film under a condition of a film thickness of 0.1 &mgr;m or greater.
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