发明授权
US06773987B1 Method and apparatus for reducing charge loss in a nonvolatile memory cell
失效
用于减少非易失性存储单元中的电荷损失的方法和装置
- 专利标题： Method and apparatus for reducing charge loss in a nonvolatile memory cell
- 专利标题（中）： 用于减少非易失性存储单元中的电荷损失的方法和装置
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申请号： US10156514申请日： 2002-05-28
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公开(公告)号： US06773987B1公开(公告)日： 2004-08-10
- 发明人: Irfan Rahim , Fangyun Richter
- 申请人： Irfan Rahim , Fangyun Richter
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
A method of fabricating a non-volatile memory cell on a semiconductor substrate is disclosed. An area of a first region of the semiconductor substrate designated for a layer of floating polysilicon is blocked while a second region of the semiconductor substrate designated for a layer of non-floating polysilicon is exposed. Exposed regions of the semiconductor substrate are doped with charges.
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