发明授权
- 专利标题： Method of fabricating shallow trench isolation
- 专利标题（中）： 浅沟槽隔离的制作方法
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申请号： US10244988申请日： 2002-09-17
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公开(公告)号： US06774007B2公开(公告)日： 2004-08-10
- 发明人: Hsien-Wen Liu , Hui Min Mao , Yi-Nan Chen , Yi-Chen Chen
- 申请人： Hsien-Wen Liu , Hui Min Mao , Yi-Nan Chen , Yi-Chen Chen
- 优先权： TW91108410A 20020424
- 主分类号： H01L2176
- IPC分类号： H01L2176
摘要：
A method of fabricating shallow trench isolation. In the method, a refill step of oxide layer and a step of forming a sacrificial layer on the semiconductor substrate are applied after filling insulating layer into the shallow trenches. The purpose of the steps is to protect the oxide layer on the semiconductor substrate and the corner of the shallow trenches, used to isolate the STI.
公开/授权文献
- US20030201473A1 Method of fabricating shallow trench isolation 公开/授权日：2003-10-30
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