发明授权
- 专利标题： Method of manufacturing a semiconductor integrated circuit device
- 专利标题（中）： 制造半导体集成电路器件的方法
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申请号： US09902673申请日： 2001-07-12
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公开(公告)号： US06774047B2公开(公告)日： 2004-08-10
- 发明人: Michimasa Funabashi
- 申请人： Michimasa Funabashi
- 优先权： JP10-257267 19980910
- 主分类号： H01L21302
- IPC分类号： H01L21302
摘要：
A processing solution containing hydrogen peroxide, hydracid fluoride salt, and water is used for pre-cleaning prior to a step of forming a gate oxide film 14 by subjecting a silicon water 1 to a heat treatment. Tetraalkyl ammonium fluoride, ammonium fluoride or the like is used as hydracid fluoride salt.
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