发明授权
- 专利标题: CMOS devices hardened against total dose radiation effects
- 专利标题(中): CMOS设备硬化总剂量辐射效应
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申请号: US09614682申请日: 2000-07-12
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公开(公告)号: US06777753B1公开(公告)日: 2004-08-17
- 发明人: Geoffery Summers , Michael Xapsos , Eric Jackson
- 申请人: Geoffery Summers , Michael Xapsos , Eric Jackson
- 主分类号: H01L2976
- IPC分类号: H01L2976
摘要:
A CMOS or NMOS device has one or more n-channel FETs disposed on a substrate, the device being resistant to total dose radiation failures, the device further including a negative voltage source, for applying a steady negative back bias to the substrate of the n-channel FETs to mitigate leakage currents in the device, thereby mitigating total dose radiation effects. A method for operating a CMOS or NMOS device to resist total dose radiation failures, the device having one or more n-channel FETs disposed on a substrate, has the steps: (a) disposing the CMOS or NMOS device in a radiation environment, the radiation environment delivering a dose on the order of tens or hundreds of krad (Si) over the period of use of the CMOS device; and (b) applying a negative back bias to the substrate of the NMOS FETs, at a voltage for mitigating leakage currents about the n-channel FETs.