公开(公告)号：US06777753B1

公开(公告)日：2004-08-17

申请号：US09614682

申请日：2000-07-12

申请人： Geoffery Summers ,  Michael Xapsos ,  Eric Jackson

发明人： Geoffery Summers ,  Michael Xapsos ,  Eric Jackson

IPC分类号： H01L2976

CPC分类号： H01L27/092 ,  H01L2924/0002 ,  H01L2924/00

摘要： A CMOS or NMOS device has one or more n-channel FETs disposed on a substrate, the device being resistant to total dose radiation failures, the device further including a negative voltage source, for applying a steady negative back bias to the substrate of the n-channel FETs to mitigate leakage currents in the device, thereby mitigating total dose radiation effects. A method for operating a CMOS or NMOS device to resist total dose radiation failures, the device having one or more n-channel FETs disposed on a substrate, has the steps: (a) disposing the CMOS or NMOS device in a radiation environment, the radiation environment delivering a dose on the order of tens or hundreds of krad (Si) over the period of use of the CMOS device; and (b) applying a negative back bias to the substrate of the NMOS FETs, at a voltage for mitigating leakage currents about the n-channel FETs.

摘要翻译： CMOS或NMOS器件具有设置在衬底上的一个或多个n沟道FET，该器件抵抗总剂量辐射故障，该器件还包括负电压源，用于向n的衬底施加稳定的负反向偏压 通道FET以减轻器件中的漏电流，从而减轻总剂量辐射效应。 一种用于操作CMOS或NMOS器件以抵抗总剂量辐射故障的方法，具有设置在衬底上的一个或多个n沟道FET的器件具有以下步骤：（a）将CMOS或NMOS器件设置在辐射环境中， 辐射环境在CMOS器件的使用期间内递送数十或数百克拉（Si）量级的剂量; 并且（b）在用于减轻围绕n沟道FET的漏电流的电压处施加负反向偏压到NMOS FET的衬底。