发明授权
- 专利标题： Etch back of interconnect dielectrics
- 专利标题（中）： 互连电介质的后蚀刻
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申请号： US10375996申请日： 2003-02-28
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公开(公告)号： US06780756B1公开(公告)日： 2004-08-24
- 发明人: David G. Farber , Ting Tsui , Robert Kraft , Craig Huffman
- 申请人： David G. Farber , Ting Tsui , Robert Kraft , Craig Huffman
- 主分类号： H01L214763
- IPC分类号： H01L214763
摘要：
An embodiment of the invention is a metal layer 14 of a back-end module 6 where the height of the interconnects 17 is greater than the height of the dielectric regions 20. Another embodiment of the invention is a method of fabricating a semiconductor wafer 4 where the height of the interconnects 17 is greater than the height of the dielectric regions 20.
公开/授权文献
- US20040169280A1 ETCH BACK OF INTERCONNECT DIELECTRICS 公开/授权日：2004-09-02