发明授权
- 专利标题: Semiconductor device, method of fabricating the same and semiconductor device fabricating apparatus
- 专利标题(中): 半导体装置及其制造方法以及半导体装置的制造装置
-
申请号: US10090842申请日: 2002-03-06
-
公开(公告)号: US06784021B2公开(公告)日: 2004-08-31
- 发明人: Shunichi Abe , Tetsuya Uebayashi , Naoki Izumi , Akira Yamazaki
- 申请人: Shunichi Abe , Tetsuya Uebayashi , Naoki Izumi , Akira Yamazaki
- 优先权: JP2001-273082 20010910
- 主分类号: H01L2144
- IPC分类号: H01L2144
摘要:
In a semiconductor device fabricating method, a plurality of wafers each having a plurality of chips into is carried and is placed in a die bonder. Chips taken out from the plurality of wafers is bonded together, respectively, and superpose in a stack by bonding layers to form a chip assembly. The chip assembly to a die pad by a bonding layer is bonded. Thus, the die bonder is able to bond the chip assembly consisting of the plurality of chips to the die pad, so that the process time of a die bonding process for bonding the plurality of chips to the die pad is comparatively short, the semiconductor fabricating apparatus produces semiconductor devices at an improved productivity, has a comparatively small scale and needs a comparatively low equipment investment.
公开/授权文献
信息查询