发明授权
US06784139B1 Conductive and robust nitride buffer layers on biaxially textured substrates
有权
在双轴纹理化衬底上的导电和坚固的氮化物缓冲层
- 专利标题: Conductive and robust nitride buffer layers on biaxially textured substrates
- 专利标题(中): 在双轴纹理化衬底上的导电和坚固的氮化物缓冲层
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申请号: US09895866申请日: 2001-06-29
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公开(公告)号: US06784139B1公开(公告)日: 2004-08-31
- 发明人: Sambasivan Sankar , Amit Goyal , Scott A. Barnett , Ilwon Kim , Donald M. Kroeger
- 申请人: Sambasivan Sankar , Amit Goyal , Scott A. Barnett , Ilwon Kim , Donald M. Kroeger
- 主分类号: H01B1200
- IPC分类号: H01B1200
摘要:
The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metal and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layers. In some embodiments the article further comprises electromagnetic devices which may be super conducting properties.
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