Invention Grant
US06784482B2 Nonvolatile semiconductor memory device comprising high concentration diffused region
失效
包括高浓度扩散区域的非易失性半导体存储器件
- Patent Title: Nonvolatile semiconductor memory device comprising high concentration diffused region
- Patent Title (中): 包括高浓度扩散区域的非易失性半导体存储器件
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Application No.: US10361601Application Date: 2003-02-11
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Publication No.: US06784482B2Publication Date: 2004-08-31
- Inventor: Katsutoshi Saeki
- Applicant: Katsutoshi Saeki
- Priority: JP2002-220571 20020730
- Main IPC: H01L2972
- IPC: H01L2972
Abstract:
The nonvolatile semiconductor memory device includes a first conductivity-type semiconductor substrate where an active region is created, a floating gate which is formed on the first conductivity-type semiconductor substrate, and a control gate which is formed on the floating gate. A first conductivity-type high concentration diffused region is formed in the non-overlapping region of the floating gate in the active region.
Public/Granted literature
- US20040021167A1 Nonvolatile semiconductor memory device comprising high concentration diffused region Public/Granted day:2004-02-05
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