Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US10329342Application Date: 2002-12-27
-
Publication No.: US06784529B2Publication Date: 2004-08-31
- Inventor: Tatsuya Fukuda , Tomokazu Otani
- Applicant: Tatsuya Fukuda , Tomokazu Otani
- Priority: JP2002-000172 20020104
- Main IPC: H01L2302
- IPC: H01L2302

Abstract:
A semiconductor device of the present invention includes the multi-stacked structure having the bottom semiconductor package with BGA or PGA terminals so that the total number of terminals of the semiconductor device can be increased without increasing the mounting area. In particular, the semiconductor device includes a first semiconductor package having an upper and lower surfaces. The first semiconductor package has a plurality of land terminals on the lower surface. The semiconductor device also includes a second semiconductor package having a planar configuration substantially the same as that of the first semiconductor package, which is provided on the upper surface of the first semiconductor package. The second semiconductor package has a plurality of lead terminals extending from a side surface of the second semiconductor package.
Public/Granted literature
- US20030127721A1 Semiconductor device Public/Granted day:2003-07-10
Information query