Invention Grant
US06787181B2 Chemical vapor deposition method of making layered superlattice materials using trimethylbismuth
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使用三甲基铋制备层状超晶格材料的化学气相沉积方法
- Patent Title: Chemical vapor deposition method of making layered superlattice materials using trimethylbismuth
- Patent Title (中): 使用三甲基铋制备层状超晶格材料的化学气相沉积方法
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Application No.: US10007119Application Date: 2001-10-26
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Publication No.: US06787181B2Publication Date: 2004-09-07
- Inventor: Kiyoshi Uchiyama , Narayan Solayappan , Carlos A. Paz de Araujo
- Applicant: Kiyoshi Uchiyama , Narayan Solayappan , Carlos A. Paz de Araujo
- Main IPC: B05D512
- IPC: B05D512
Abstract:
A method of forming a Bi-layered superlattice material on a substrate using chemical vapor deposition of a precursor solution of trimethylbismuth and a metal compound dissolved in an organic solvent. The precursor solution is heated and vaporized prior to deposition of the precursor solution on an integrated circuit substrate by chemical vapor deposition. No heating steps including a temperature of 650° C. or higher are used.
Public/Granted literature
- US20030080325A1 Chemical vapor deposition method of making layered superlattice materials using trimethylbismuth Public/Granted day:2003-05-01
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