Invention Grant
- Patent Title: Non volatile embedded memory with poly protection layer
- Patent Title (中): 非易失性嵌入式存储器，具有多层保护层
-
Application No.: US10253039Application Date: 2002-09-24
-
Publication No.: US06787416B2Publication Date: 2004-09-07
- Inventor: Tung-Cheng Kuo , Chien-Hung Liu , Shyi-Shuh Pan , Shou-Wei Hung
- Applicant: Tung-Cheng Kuo , Chien-Hung Liu , Shyi-Shuh Pan , Shou-Wei Hung
- Main IPC: H01L21336
- IPC: H01L21336
Abstract:
The present invention includes devices and methods to form non-volatile memory cells and peripheral devices, with reduced damage to the electron trapping layer and, optionally, reduced thermal exposure during CMOS processing. Particular aspects of the present invention are described in the claims, specification and drawings.
Public/Granted literature
- US20040056319A1 Non volatile embedded memory with poly protection layer Public/Granted day:2004-03-25
Information query
