发明授权
- 专利标题： Non volatile embedded memory with poly protection layer
- 专利标题（中）： 非易失性嵌入式存储器，具有多层保护层
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申请号： US10253039申请日： 2002-09-24
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公开(公告)号： US06787416B2公开(公告)日： 2004-09-07
- 发明人: Tung-Cheng Kuo , Chien-Hung Liu , Shyi-Shuh Pan , Shou-Wei Hung
- 申请人： Tung-Cheng Kuo , Chien-Hung Liu , Shyi-Shuh Pan , Shou-Wei Hung
- 主分类号： H01L21336
- IPC分类号： H01L21336
摘要：
The present invention includes devices and methods to form non-volatile memory cells and peripheral devices, with reduced damage to the electron trapping layer and, optionally, reduced thermal exposure during CMOS processing. Particular aspects of the present invention are described in the claims, specification and drawings.
公开/授权文献
- US20040056319A1 Non volatile embedded memory with poly protection layer 公开/授权日：2004-03-25
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