Invention Grant
- Patent Title: Method for making a semiconductor device having an ultra-thin high-k gate dielectric
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Application No.: US10315268Application Date: 2002-12-10
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Publication No.: US06787440B2Publication Date: 2004-09-07
- Inventor: Christopher G. Parker , Markus Kuhn , Ying Zhou , Scott A. Hareland , Suman Datta , Nick Lindert , Robert S. Chau , Timothy E. Glassman , Matthew V. Metz , Sunit Tyagi
- Applicant: Christopher G. Parker , Markus Kuhn , Ying Zhou , Scott A. Hareland , Suman Datta , Nick Lindert , Robert S. Chau , Timothy E. Glassman , Matthew V. Metz , Sunit Tyagi
- Main IPC: H01L214763
- IPC: H01L214763
Abstract:
A method for making a semiconductor device is described. That method comprises forming on a substrate a buffer layer and a high-k gate dielectric layer, oxidizing the surface of the high-k gate dielectric layer, and then forming a gate electrode on the oxidized high-k gate dielectric layer.
Public/Granted literature
- US20040110361A1 Method for making a semiconductor device having an ultra-thin high-k gate dielectric Public/Granted day:2004-06-10
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