发明授权
US06787476B1 Etch stop layer for etching FinFET gate over a large topography
有权
蚀刻停止层，用于在大地形上蚀刻FinFET栅极
- 专利标题： Etch stop layer for etching FinFET gate over a large topography
- 专利标题（中）： 蚀刻停止层，用于在大地形上蚀刻FinFET栅极
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申请号： US10632989申请日： 2003-08-04
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公开(公告)号： US06787476B1公开(公告)日： 2004-09-07
- 发明人: Srikanteswara Dakshina-Murthy , Cyrus E. Tabery , Chih-Yuh Yang , Bin Yu
- 申请人： Srikanteswara Dakshina-Murthy , Cyrus E. Tabery , Chih-Yuh Yang , Bin Yu
- 主分类号： H01L21302
- IPC分类号： H01L21302
摘要：
A method of forming a gate for a Fin Field Effect Transistor (FinFET) is provided. The method includes forming a first layer of material over a fin and forming a second layer over the first layer. The second layer includes either Ti or TiN. The method further includes forming a third layer over the second layer. The third layer includes an anti-reflective coating. The method also includes etching the first, second and third layers to form the gate for the FinFET.
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