A method of forming a via in an integrated circuit is provided. The method includes forming a stack including a first layer, a hard mask layer, and at least one intermediate layer disposed between the first layer and the hard mask layer. The first layer comprises a first metal line. The method further includes forming a channel in the hard mask layer. The channel has a first side and a second side opposite the first side. The method further includes forming a resist layer having an opening extending over both the first and second sides of the channel. The method further includes forming a metal line trench and a via opening aligned with the first and second sides of the channel. The method further includes filling the filling the metal line trench and the via opening with a conductive material to create a second metal line and a via connecting the second metal line with the first metal line.