Invention Grant
- Patent Title: Method and apparatus for testing semiconductor devices
- Patent Title (中): 用于半导体器件测试的方法和装置
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Application No.: US09761199Application Date: 2001-01-16
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Publication No.: US06789224B2Publication Date: 2004-09-07
- Inventor: Takeo Miura
- Applicant: Takeo Miura
- Priority: JP2000-009113 20000118; JP2000-178917 20000614
- Main IPC: G01R3128
- IPC: G01R3128

Abstract:
Data output from a semiconductor device under test and a reference clock output therefrom in synchronization with the data are sampled by slightly phased-apart multiphase strobe pulses. The phases of points of change of the output data and the reference clock are obtained from the sampled outputs, then the phase difference between them is measured, and a check is made to determine if the phase difference falls within a predetermined range, thereby evaluating the semiconductor device under test on a pass/fail basis.
Public/Granted literature
- US20010052097A1 Method and apparatus for testing semiconductor devices Public/Granted day:2001-12-13
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