发明授权
US06790692B2 Method for fabricating semiconductor device 失效
制造半导体器件的方法

  • 专利标题: Method for fabricating semiconductor device
  • 专利标题(中): 制造半导体器件的方法
  • 申请号: US10602000
    申请日: 2003-06-24
  • 公开(公告)号: US06790692B2
    公开(公告)日: 2004-09-14
  • 发明人: Kazutoshi Onozawa
  • 申请人: Kazutoshi Onozawa
  • 优先权: JP2002-283684 20020927
  • 主分类号: H01L2100
  • IPC分类号: H01L2100
Method for fabricating semiconductor device
摘要:
Formed first is a template having openings located to correspond to a pattern in which a plurality of semiconductor laser elements are to be arranged. Then, the template is held on the principal surface of a mounting wafer onto which the semiconductor elements are to be arranged. Subsequently, the semiconductor laser elements are dispersed into a fluid, and the semiconductor-laser-element-dispersed fluid is poured over the wafer on which the template is held. In this manner, the semiconductor laser elements are disposed into the respective openings of the template in a self-aligned manner.
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