发明授权
- 专利标题: Method for fabricating semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US10602000申请日: 2003-06-24
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公开(公告)号: US06790692B2公开(公告)日: 2004-09-14
- 发明人: Kazutoshi Onozawa
- 申请人: Kazutoshi Onozawa
- 优先权: JP2002-283684 20020927
- 主分类号: H01L2100
- IPC分类号: H01L2100
摘要:
Formed first is a template having openings located to correspond to a pattern in which a plurality of semiconductor laser elements are to be arranged. Then, the template is held on the principal surface of a mounting wafer onto which the semiconductor elements are to be arranged. Subsequently, the semiconductor laser elements are dispersed into a fluid, and the semiconductor-laser-element-dispersed fluid is poured over the wafer on which the template is held. In this manner, the semiconductor laser elements are disposed into the respective openings of the template in a self-aligned manner.
公开/授权文献
- US20040063233A1 Method for fabricating semiconductor device 公开/授权日:2004-04-01
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