发明授权
- 专利标题： Process for filling polysilicon seam
- 专利标题（中）： 填充多晶硅缝的工艺
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申请号： US10375485申请日： 2003-02-27
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公开(公告)号： US06790740B2公开(公告)日： 2004-09-14
- 发明人: Tse-Yao Huang , Tzu-Ching Tsai , Yi-Nan Chen
- 申请人： Tse-Yao Huang , Tzu-Ching Tsai , Yi-Nan Chen
- 优先权： TW91125201A 20021025
- 主分类号： H01L2120
- IPC分类号： H01L2120
摘要：
A process for filling a polysilicon seam. First, a semiconducting substrate or an insulating layer having a trench is provided, and a first polysilicon layer having a seam is filled in the trench. Next, the first polysilicon layer is etched to expose the seam. Next, a second polysilicon layer is formed to fill the top portion of the seam and close the seam.
公开/授权文献
- US20040082137A1 Process for filling polysilicon seam 公开/授权日：2004-04-29