Semiconductor memory device capable of changing an address space thereof

Invention Grant

US06791896B2 Semiconductor memory device capable of changing an address space thereof 失效

Title translation: 能够改变其地址空间的半导体存储器件

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Patent Title: Semiconductor memory device capable of changing an address space thereof
Patent Title (中): 能够改变其地址空间的半导体存储器件
Application No.: US10000397

Application Date: 2001-12-04
Publication No.: US06791896B2

Publication Date: 2004-09-14
Inventor: Tamaki Tsuruda , Yoshio Fudeyasu , Kozo Ishida
Applicant: Tamaki Tsuruda , Yoshio Fudeyasu , Kozo Ishida
Priority: JP2001-044670 20010221
Main IPC: G11C800
IPC: G11C800

Semiconductor memory device capable of changing an address space thereof

Abstract:

The state of a prescribed internal column address signal bit is selectively fixed according to a mode switch circuit. A specific row address signal bit is transmitted instead of a column address signal bit under the control of the mode switch circuit. Thus, a semiconductor memory device having a plurality of storage capacities and address spaces is realized with a single chip structure.

Abstract(Chinese):

根据模式切换电路选择性地固定规定的内部列地址信号位的状态。在模式切换电路的控制下，发送特定的行地址信号位而不是列地址信号位。因此，具有多个存储容量和地址空间的半导体存储器件通过单个芯片结构实现。

Public/Granted literature

US20020114205A1 Semiconductor memory device capable of changing an address space thereof Public/Granted day:2002-08-22

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