A method is provided for forming a relaxed single-crystal silicon germanium film on a silicon substrate. Also provided is a film structure with a relaxed layer of graded silicon germanium on a silicon substrate. The method comprises: providing a silicon (Si) substrate with a top surface; growing a graded layer of strained single-crystal Si1−xGex having a bottom surface overlying the Si substrate top surface and a top surface, where x increases with the Si1−xGex layer thickness in the range between 0.03 and 0.5, wherein the Si1−xGex layer has a thickness in the range of 2500 Å to 5000 Å; implanting hydrogen ions; penetrating the Si substrate with the hydrogen ions a depth in the range of 300 Å to 1000 Å; implanting heavy ions, such as Si or Ge, into the Si1−xGex; in response to the heavy ion implantation, amorphizing a first region of the Si1−xGex layer adjacent the Si substrate; annealing; in response to the annealing, forming a hydrogen platelets layer between the Si substrate and the Si1−xGex layer; forming a silicon layer with a high density of hydrogen underlying the hydrogen platelets layer; and, forming a relaxed single-crystal Si1−xGex region, free of defects.