发明授权
US06794716B2 SOI MOSFET having body contact for preventing floating body effect and method of fabricating the same
有权
具有用于防止浮体效应的身体接触的SOI MOSFET及其制造方法
- 专利标题： SOI MOSFET having body contact for preventing floating body effect and method of fabricating the same
- 专利标题（中）： 具有用于防止浮体效应的身体接触的SOI MOSFET及其制造方法
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申请号： US09924787申请日： 2001-08-08
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公开(公告)号： US06794716B2公开(公告)日： 2004-09-21
- 发明人: Sung-bae Park , Jun Kim , Eun-han Kim , Hee-sung Kang , Young-wug Kim
- 申请人： Sung-bae Park , Jun Kim , Eun-han Kim , Hee-sung Kang , Young-wug Kim
- 优先权： KR2000-46613 20000811; KR2001-19943 20010413
- 主分类号： H01L2701
- IPC分类号： H01L2701
摘要：
An SOI MOSFET having a body contact for preventing the floating body effect is provided. The body contact is a trench perforating a body and a buried oxide layer to a semiconductor substrate. The trench is filled with a conductive material to electrically connect the body to the semiconductor substrate. Impurity ions are implanted into a predetermined region of the semiconductor substrate in contact with the lower portion of the body contact to form an ohmic contact. In the SOI MOSFET, an additional metal interconnection line is not needed to supply power to the body. Also, malfunction of a circuit due to stray capacitance of a contact can be prevented.
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