发明授权
- 专利标题： Dynamic threshold voltage metal insulator field effect transistor
- 专利标题（中）： 动态阈值电压金属绝缘子场效应晶体管
-
申请号： US10200445申请日： 2002-07-23
-
公开(公告)号： US06794720B2公开(公告)日： 2004-09-21
- 发明人: Atsushi Yagishita , Tomohiro Saito , Toshihiko Iinuma
- 申请人： Atsushi Yagishita , Tomohiro Saito , Toshihiko Iinuma
- 优先权： JP11-186995 19990630; JP2000-175512 20000612
- 主分类号： H01L2712
- IPC分类号： H01L2712
摘要：
In a semiconductor device in which the gate electrode of a MISFET formed on a semiconductor substrate is electrically connected to a well region under the channel of the MISFET, the MISFET is formed in an island-shaped element region formed on the semiconductor substrate, and electrical connection between the gate electrode of the MISFET and the well region in the semiconductor substrate is done on the side surface of the island-shaped element region.
公开/授权文献
信息查询
