Magneto-resistive device including soft synthetic ferrimagnet reference layer

Invention Grant

US06795281B2 Magneto-resistive device including soft synthetic ferrimagnet reference layer 有权

Title translation: 磁阻器件包括软质合成铁磁参考层

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Patent Title: Magneto-resistive device including soft synthetic ferrimagnet reference layer
Patent Title (中): 磁阻器件包括软质合成铁磁参考层
Application No.: US09963933

Application Date: 2001-09-25
Publication No.: US06795281B2

Publication Date: 2004-09-21
Inventor: Lung Tran , Manish Sharma , Manoj Bhattacharyya
Applicant: Lung Tran , Manish Sharma , Manoj Bhattacharyya
Main IPC: H01L2984
IPC: H01L2984

Magneto-resistive device including soft synthetic ferrimagnet reference layer

Abstract:

A memory device includes a data layer having a magnetization that can be oriented in first and second directions; and a synthetic ferrimagnet reference layer. The data and reference layers have different coercivities.

Abstract(Chinese):

存储器件包括具有可以在第一和第二方向上定向的磁化的数据层; 和合成亚铁磁参考层。数据和参考层具有不同的矫顽力。

Public/Granted literature

US20030057461A1 Magneto-resistive device including soft synthetic ferrimagnet reference layer Public/Granted day:2003-03-27

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