Invention Grant
US06795344B2 Floating gate memory architecture with program voltage stable circuit 有权
具有编程电压稳定电路的浮动存储架构

  • Patent Title: Floating gate memory architecture with program voltage stable circuit
  • Patent Title (中): 具有编程电压稳定电路的浮动存储架构
  • Application No.: US10316851
    Application Date: 2002-12-12
  • Publication No.: US06795344B2
    Publication Date: 2004-09-21
  • Inventor: Yeh Jun Lin
  • Applicant: Yeh Jun Lin
  • Priority: TW91113409A 20020619
  • Main IPC: G11C1610
  • IPC: G11C1610
Floating gate memory architecture with program voltage stable circuit
Abstract:
A floating gate memory architecture having current regulator is disclosed. A floating gate memory block have at least a programming voltage node for being programmed a plurality of bits according to the control of a plurality of bit lines. A high voltage source provides a regulated voltage when the plurality of bits are programmed in. A high voltage decoder locates between the floating gate memory block and the high voltage source for connecting the voltage to the programming voltage node according to the programming data of the floating gate memory block. A current regulator connects to the programming voltage node for keeping the programming voltage node in a constant voltage, and making a constant current flowing into said floating gate memory block according to said plurality of bits.
Public/Granted literature
Information query
Patent Agency Ranking
0/0