• Patent Title: Field emission type cold cathode device, manufacturing method thereof and vacuum micro device
  • Application No.: US10681288
    Application Date: 2003-10-09
  • Publication No.: US06796870B2
    Publication Date: 2004-09-28
  • Inventor: Masayuki Nakamoto
  • Applicant: Masayuki Nakamoto
  • Priority: JP2000-098026 20000331
  • Main IPC: H01J912
  • IPC: H01J912
Field emission type cold cathode device, manufacturing method thereof and vacuum micro device
Abstract:
A field emission type cold cathode device comprises a substrate, and a metal plating layer formed on the substrate, the metal plating layer contains at least one carbon structure selected from a group of fullerenes and carbon nanotubes, the carbon structure is stuck out from the metal plating layer and a part of the carbon structure is buried in the metal plating layer.
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