Invention Grant
- Patent Title: Field emission type cold cathode device, manufacturing method thereof and vacuum micro device
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Application No.: US10681288Application Date: 2003-10-09
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Publication No.: US06796870B2Publication Date: 2004-09-28
- Inventor: Masayuki Nakamoto
- Applicant: Masayuki Nakamoto
- Priority: JP2000-098026 20000331
- Main IPC: H01J912
- IPC: H01J912

Abstract:
A field emission type cold cathode device comprises a substrate, and a metal plating layer formed on the substrate, the metal plating layer contains at least one carbon structure selected from a group of fullerenes and carbon nanotubes, the carbon structure is stuck out from the metal plating layer and a part of the carbon structure is buried in the metal plating layer.
Public/Granted literature
- US20040072494A1 Field emission type cold cathode device, manufacturing method thereof and vacuum micro device Public/Granted day:2004-04-15
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