Field emission cold cathode device of lateral type
    1.
    发明授权
    Field emission cold cathode device of lateral type 失效
    场发射冷阴极器件的横向型

    公开(公告)号:US06891320B2

    公开(公告)日:2005-05-10

    申请号:US09987862

    申请日:2001-11-16

    申请人: Masayuki Nakamoto

    发明人: Masayuki Nakamoto

    摘要: A field emission cold cathode device of a lateral type includes a cathode electrode and gate electrode disposed on a major surface of a support substrate laterally side by side. The cathode electrode and gate electrode have side surfaces which oppose each other, and an emitter is disposed on the opposite side surface of the cathode electrode. The emitter includes a metal plating layer formed on the cathode electrode, and a plurality of granular or rod-shaped micro-bodies. The micro-bodies are consisting essentially of a material selected from the group consisting of fullerenes, carbon nanotubes, graphite, a material with a low work function, a material with a negative electron affinity, and a metal material, and are supported in the metal plating layer in a dispersed state.

    摘要翻译: 横向型的场致发射冷阴极器件包括侧向并排设置在支撑基板的主表面上的阴极电极和栅极电极。 阴极电极和栅电极具有彼此相对的侧表面,并且发射极设置在阴极的相对侧表面上。 发射极包括在阴极上形成的金属镀层,以及多个粒状或棒状的微型体。 微体基本上由选自富勒烯,碳纳米管,石墨,低功函数的材料,具有负电子亲和性的材料和金属材料组成的组合物组成,并且被支撑在金属中 电镀层处于分散状态。

    Field emission cold-cathode device
    2.
    发明授权
    Field emission cold-cathode device 失效
    场发射冷阴极器件

    公开(公告)号:US06417606B1

    公开(公告)日:2002-07-09

    申请号:US09414840

    申请日:1999-10-08

    IPC分类号: H01J130

    摘要: In a field emission cold-cathode device, a cathode line or electrode is arranged on a glass substrate. An emitter is arranged on the cathode electrode and is formed of a conductive layer, a low-work-function material layer, and a tip layer stacked one on top of the other in this order. The emitter has a pyramid shape in which the tip layer has a sharp tip. The low-work-function material layer is made of a material having a work function of 4.0 eV or less. The tip layer is made of a material having a negative electron affinity and formed of granular bodies or linear bodies each having a diameter of 100 nm or less.

    摘要翻译: 在场发射冷阴极器件中,阴极线或电极布置在玻璃衬底上。 发射极配置在阴极上,由依次层叠的导电层,低功函数材料层和顶层构成。 发射器具有金字塔形状,其中尖端层具有尖锐的尖端。 低功函数材料层由功函数为4.0eV以下的材料构成。 尖端层由具有负电子亲和性的材料制成,并且由直径为100nm以下的粒状体或线状体构成。

    Micro-vacuum device
    3.
    发明授权
    Micro-vacuum device 失效
    微型真空装置

    公开(公告)号:US5977693A

    公开(公告)日:1999-11-02

    申请号:US526452

    申请日:1995-09-11

    摘要: A micro-vacuum device comprises a substrates an emitter having a sharp end formed above the substrate, a gate electrode provided above the emitter, and an anode having cooling means provided oppositely to the substrate above the gate electrode.

    摘要翻译: 微型真空装置包括基板,其具有形成在基板上方的尖端的发射极,设置在发射极上方的栅电极和具有与栅电极上方的基板相对设置的冷却装置的阳极。

    Optical sensor
    4.
    发明授权
    Optical sensor 失效
    光学传感器

    公开(公告)号:US5545980A

    公开(公告)日:1996-08-13

    申请号:US547337

    申请日:1995-10-24

    申请人: Masayuki Nakamoto

    发明人: Masayuki Nakamoto

    CPC分类号: G01R33/0322

    摘要: An optical sensor comprising: a light irradiation means for irradiating a linearly polarized light having a wavelength of 740 to 890 nm; a magneto-optical element having a composition of Y.sub.3-X Tb.sub.X Fe.sub.5 O.sub.12 (0.3.ltoreq..times..ltoreq.0.8) for Faraday rotating the linearly polarized light to output a rotated polarized light; and a detecting means for modulating in intensity the rotated polarized light which has been Faraday rotated by the magneto-optical element and detecting a light output of the rotated polarized light from the magneto-optical element. This magneto-optical sensor has a high sensibility and an excellent temperature characteristics under condition of low-magnetic field. When the optical sensor 10 is additionally provided with an electro-optical element having Pockels effect in parallel to the magneto-optical element, it becomes possible to measure not only current intensity but also voltage intensity.

    摘要翻译: 一种光学传感器,包括:用于照射波长为740至890nm的线偏振光的光照射装置; 具有用于法拉第的Y3-XTbXFe5O12(0.3

    Field emission cathode structure, method for production thereof, and
flat panel display device using same
    5.
    发明授权
    Field emission cathode structure, method for production thereof, and flat panel display device using same 失效
    场发射阴极结构,其制造方法以及使用其的平板显示装置

    公开(公告)号:US5499938A

    公开(公告)日:1996-03-19

    申请号:US291937

    申请日:1994-08-16

    IPC分类号: H01J1/304 H01J9/02

    CPC分类号: H01J1/3042 H01J9/025

    摘要: A field emission cathode which comprises an emitter provided with a sharp point for emission of electrons and a controlling gate electrode is composed of a supporting substrate, an emitter material layer formed of an emitter material, superposed on and attached fast to the supporting substrate, and provided with an emitter hole, an insulator layer so formed on the surface of the emitter material layer as to expose the tip part of the emitter projection therethrough, and an impurity diffusion layer formed on the surface of the insulator layer and enabled to function as an etching stopper layer. The method for the production of the field emission cathode comprises a step of forming a first hole pointed toward the leading end thereof on a first supporting substrate, a step of forming the impurity diffusion layer on the surface of the first supporting substrate, a step of forming the insulator layer on the surface of the impurity diffusion layer, a step of depositing an emitter material layer on the surface of the insulator layer including a hole while filling the hole with an emitter material thereby giving rise to a laminate, a step of integrally joining a second supporting substrate to the surface of the emitter material layer of the laminate, a step of removing by etching the first supporting substrate thereby exposing the surface of the impurity diffusion layer including the projection corresponding to the first hole, and a step of selectively removing the impurity diffusion layer and the insulator layer thereby exposing a tip of the projection of the emitter layer.

    摘要翻译: 包括发射电子的尖端的发射极和控制栅电极的场致发射阴极由支撑衬底,由发射极材料形成的发射极材料层叠加并快速附着在支撑衬底上,以及 设置有发射极孔,在发射体材料层的表面上形成的绝缘体层,以使发射极突起的前端部分暴露出来,以及在绝缘体层的表面上形成的杂质扩散层, 蚀刻阻挡层。 制造场致发射阴极的方法包括在第一支撑衬底上形成指向其前端的第一孔的步骤,在第一支撑衬底的表面上形成杂质扩散层的步骤, 在杂质扩散层的表面上形成绝缘体层,在包括孔的绝缘体层的表面上沉积发射体材料层的步骤,同时用发射体材料填充孔,从而产生层压体,整体地形成步骤 将第二支撑基板接合到层压体的发射极材料层的表面,通过蚀刻第一支撑基板从而暴露包括对应于第一孔的突起的杂质扩散层的表面的步骤,以及选择性地 去除杂质扩散层和绝缘体层,从而暴露发射极层的突起的尖端。

    Field emission cold cathode device of lateral type
    6.
    发明授权
    Field emission cold cathode device of lateral type 失效
    场发射冷阴极器件的横向型

    公开(公告)号:US07187112B2

    公开(公告)日:2007-03-06

    申请号:US11223972

    申请日:2005-09-13

    申请人: Masayuki Nakamoto

    发明人: Masayuki Nakamoto

    IPC分类号: H01J1/304

    摘要: A field emission cold cathode device of a lateral type includes a cathode electrode and gate electrode disposed on a major surface of a support substrate laterally side by side. The cathode electrode and gate electrode have side surfaces which oppose each other, and an emitter is disposed on the opposite side surface of the cathode electrode. The emitter includes a metal plating layer formed on the cathode electrode, and a plurality of granular or rod-shaped micro-bodies. The micro-bodies are consisting essentially of a material selected from the group consisting of fullerenes, carbon nanotubes, graphite, a material with a low work function, a material with a negative electron affinity, and a metal material, and are supported in the metal plating layer in a dispersed state.

    摘要翻译: 横向型的场致发射冷阴极器件包括侧向并排设置在支撑基板的主表面上的阴极电极和栅极电极。 阴极电极和栅电极具有彼此相对的侧表面,并且发射极设置在阴极的相对侧表面上。 发射极包括在阴极上形成的金属镀层,以及多个粒状或棒状的微型体。 微体基本上由选自富勒烯,碳纳米管,石墨,低功函数的材料,具有负电子亲和性的材料和金属材料组成的组合物组成,并且被支撑在金属中 电镀层处于分散状态。

    Field emission cold cathode device of lateral type

    公开(公告)号:US07102277B2

    公开(公告)日:2006-09-05

    申请号:US10799876

    申请日:2004-03-15

    申请人: Masayuki Nakamoto

    发明人: Masayuki Nakamoto

    IPC分类号: H01J1/304

    摘要: A field emission cold cathode device of a lateral type includes a cathode electrode and gate electrode disposed on a major surface of a support substrate laterally side by side. The cathode electrode and gate electrode have side surfaces which oppose each other, and an emitter is disposed on the opposite side surface of the cathode electrode. The emitter includes a metal plating layer formed on the cathode electrode, and a plurality of granular or rod-shaped micro-bodies. The micro-bodies are consisting essentially of a material selected from the group consisting of fullerenes, carbon nanotubes, graphite, a material with a low work function, a material with a negative electron affinity, and a metal material, and are supported in the metal plating layer in a dispersed state.

    Method of manufacturing field emission device and display apparatus

    公开(公告)号:US20060178076A1

    公开(公告)日:2006-08-10

    申请号:US11384313

    申请日:2006-03-21

    IPC分类号: H01J9/24 H01J9/04

    摘要: A method of manufacturing a field emission device having emitter shapes, comprise the steps of forming a first original plate having a major surface provided with emitter shapes, by cutting a surface portion of a base material, forming a first material layer on the major surface of the first original plate on which the emitter shapes are provided; separating the first material layer from the first original plate, thereby obtaining a second original plate having recesses onto which the emitter shapes on the first original plate are transferred, forming a second material layer on a major surface of the second original plate on which the recesses are provided; and separating the second material layer from the second original plate, thereby to obtain a substrate having projections portions onto which shapes of the recesses of the second original plate are transferred.

    Field emission cold cathode device of lateral type

    公开(公告)号:US20060061257A1

    公开(公告)日:2006-03-23

    申请号:US11223972

    申请日:2005-09-13

    申请人: Masayuki Nakamoto

    发明人: Masayuki Nakamoto

    IPC分类号: H01J63/04 H01J1/62

    摘要: A field emission cold cathode device of a lateral type includes a cathode electrode and gate electrode disposed on a major surface of a support substrate laterally side by side. The cathode electrode and gate electrode have side surfaces which oppose each other, and an emitter is disposed on the opposite side surface of the cathode electrode. The emitter includes a metal plating layer formed on the cathode electrode, and a plurality of granular or rod-shaped micro-bodies. The micro-bodies are consisting essentially of a material selected from the group consisting of fullerenes, carbon nanotubes, graphite, a material with a low work function, a material with a negative electron affinity, and a metal material, and are supported in the metal plating layer in a dispersed state.