发明授权
- 专利标题： Method of manufacturing a capacitor having tantalum oxide film as an insulating film
- 专利标题（中）： 制造具有氧化钽膜作为绝缘膜的电容器的方法
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申请号： US09859513申请日： 2001-05-18
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公开(公告)号： US06797560B2公开(公告)日： 2004-09-28
- 发明人: Keizo Hosoda , Yusuke Muraki
- 申请人： Keizo Hosoda , Yusuke Muraki
- 优先权： JP2000-149988 20000522
- 主分类号： H01L218242
- IPC分类号： H01L218242
摘要：
A tantalum oxide film is formed on a lower conductive film by vapor-deposition, and then is treated with active oxygen species. The treated film is annealed at a temperature lower than the crystallization temperature of tantalum oxide by 10 to 80° C. in an inert atmosphere. Subsequently, an upper conductive film is formed on the annealed tantalum oxide film.
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