公开(公告)号：US09105586B2

公开(公告)日：2015-08-11

申请号：US12078958

申请日：2008-04-08

申请人： Shigeki Tozawa ,  Yusuke Muraki

发明人： Shigeki Tozawa ,  Yusuke Muraki

IPC分类号： H01L21/306 ,  H01L21/311 ,  H01L21/67

CPC分类号： H01L21/31138 ,  H01L21/67069 ,  H01L21/67155

摘要： An etching method includes preparing a target object such that a first oxide film made of silicon oxide containing at least one of B and P is formed on a substrate, a second oxide film made of silicon oxide containing neither of B and P is formed on the first oxide film, and a contact portion is present below an interface between the first oxide film and the second oxide film. The etching method further includes etching the second oxide film and the first oxide film, thereby forming a hole reaching the contact portion, and etching the first oxide film by a dry process using a gas containing HF, thereby expanding a portion of the hole adjacent to an upper side of the contact portion and inside the first oxide film.

摘要翻译： 蚀刻方法包括制备目标物体，使得在基板上形成由含有B和P中的至少一个的氧化硅制成的第一氧化物膜，在不含有B和P的氧化硅中形成的第二氧化物膜形成在 第一氧化物膜和接触部分存在于第一氧化物膜和第二氧化物膜之间的界面之下。 蚀刻方法还包括蚀刻第二氧化物膜和第一氧化物膜，从而形成到达接触部分的孔，并且通过使用含有HF的气体的干法来蚀刻第一氧化物膜，从而使孔的一部分与 接触部分的上侧和第一氧化膜内部。

公开(公告)号：US08741065B2

公开(公告)日：2014-06-03

申请号：US13172366

申请日：2011-06-29

申请人： Masaya Odagiri ,  Yusuke Muraki ,  Jin Fujihara

发明人： Masaya Odagiri ,  Yusuke Muraki ,  Jin Fujihara

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00 ,  C23C16/50

CPC分类号： H01L21/67248 ,  C23C16/4586 ,  C23C16/463 ,  H01J37/20 ,  H01J37/32724 ,  H01J37/32779 ,  H01J2237/2001 ,  H01J2237/201 ,  H01L21/68771

摘要： A substrate processing apparatus includes a substrate stage for mounting two or more substrates thereon. The substrate stage includes substrate stage units. Each of the substrate stage units includes a central temperature control flow path for controlling the temperature of a central portion of each of the substrates and a peripheral temperature control flow path for controlling the temperature of a peripheral portion of each of the substrates. The central temperature control flow path and the peripheral temperature control flow path are formed independently of each other. The substrate stage includes one temperature control medium inlet port for introducing therethrough a temperature control medium into the peripheral temperature control flow path and temperature control medium outlet ports for discharging therethrough the temperature control medium from the peripheral temperature control flow path. The number of the temperature control medium outlet ports corresponds to the number of substrates.

摘要翻译： 基板处理装置包括用于在其上安装两个或更多个基板的基板台。 衬底台包括衬底台单元。 每个基板台单元包括用于控制每个基板的中心部分的温度的中央温度控制流路和用于控制每个基板的周边部分的温度的外围温度控制流路。 中央温度控制流路和周边温度控制流路彼此独立地形成。 基板台包括一个温度控制介质入口，用于将温度控制介质引入周边温度控制流路和温度控制介质出口，用于从温度控制流路通过温度控制介质排出。 温度控制介质出口的数量对应于基板的数量。

公开(公告)号：US20100163179A1

公开(公告)日：2010-07-01

申请号：US12086634

申请日：2006-12-12

申请人： Shigeki Tozawa ,  Yusuke Muraki ,  Tadashi Iino ,  Daisuke Hayashi

发明人： Shigeki Tozawa ,  Yusuke Muraki ,  Tadashi Iino ,  Daisuke Hayashi

IPC分类号： B08B13/00

CPC分类号： H01L21/02057 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/66636 ,  H01L29/7848

摘要： [Problem] To provide a substrate processing apparatus capable of preventing adherence of hydrogen fluoride to an inner surface the like of a chamber.[Means for Solving] An apparatus housing and processing a substrate W in a chamber includes a hydrogen fluoride gas supply path 61 for supplying a hydrogen fluoride gas into a chamber 40, wherein a part or whole of an inner surface of the chamber 40 is formed of Al or Al alloy which has not been subjected to surface oxidation treatment. The chamber 40 includes a lid 52 closing an upper opening of a chamber main body 51, and at least an inner surface of the lid 52 is formed of the Al or Al alloy which has not been subjected to alumite treatment.

摘要翻译： [问题]提供一种能够防止氟化氢与室的内表面粘附的基板处理装置。 [解决手段]在室内容纳和处理基板W的装置包括用于将氟化氢气体供应到室40中的氟化氢气体供给路径61，其中形成室40的内表面的一部分或全部 的未经表面氧化处理的Al或Al合金。 室40包括封闭室主体51的上开口的盖52，并且盖52的至少内表面由未进行防氧化处理的Al或Al合金形成。

公开(公告)号：US20070184379A1

公开(公告)日：2007-08-09

申请号：US10591345

申请日：2005-03-01

申请人： Shigeo Ashigaki ,  Yoshihiro Kato ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Tetsu Kawasaki ,  Satoru Shimura

发明人： Shigeo Ashigaki ,  Yoshihiro Kato ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Tetsu Kawasaki ,  Satoru Shimura

IPC分类号： G03C1/00

CPC分类号： G03F7/42 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/67051

摘要： A processing method of a substrate includes: a step of forming an Si—C based film and a resist film in turn on an objective film to be etched that has been formed on a substrate; a first etching step of etching the Si—C based film making use of the resist film as a mask; and a second etching step of etching the objective film to be etched making use of the resist film and the Si—C based film as a mask. The processing method further includes a peeling-off step of peeling-off the resist film at a desired timing. The peeling-off step includes a preparing step of preparing an organic solvent as a release agent, and an applying step of applying the organic solvent to the resist film.

摘要翻译： 基板的处理方法包括：依次形成Si-C基膜和抗蚀剂膜的步骤，所述Si-C基膜和抗蚀剂膜依次形成在基板上形成的待蚀刻目标膜上; 蚀刻使用抗蚀剂膜作为掩模的Si-C基膜的第一蚀刻步骤; 以及使用抗蚀剂膜和Si-C基膜作为掩模蚀刻待蚀刻的目标膜的第二蚀刻步骤。 该处理方法还包括在期望的时刻剥离抗蚀剂膜的剥离步骤。 剥离步骤包括制备作为脱模剂的有机溶剂的制备步骤和将有机溶剂施加到抗蚀剂膜的施加步骤。

公开(公告)号：US20060219171A1

公开(公告)日：2006-10-05

申请号：US11391390

申请日：2006-03-29

申请人： Yoshiaki Sasaki ,  Yusuke Muraki ,  Eiichi Nishimura ,  Yuko Ono

发明人： Yoshiaki Sasaki ,  Yusuke Muraki ,  Eiichi Nishimura ,  Yuko Ono

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01L21/67742 ,  C23C16/4412 ,  C23C16/54 ,  H01L21/67017

摘要： In a substrate processing apparatus comprising a processing unit where a specific type of processing is executed on a wafer and a transfer chamber through which a wafer is carried into/out of the processing unit, the transfer chamber includes an air intake unit through which external air is drawn into the transfer chamber, a discharge unit disposed so as to face opposite the air intake unit, through which the discharge gas in the transfer chamber is discharged and a discharge gas filtering means disposed at the discharge unit and constituted with a harmful constituent eliminating filter through which a harmful constituent contained in the discharge gas, at least, is eliminated.

公开(公告)号：US06797560B2

公开(公告)日：2004-09-28

申请号：US09859513

申请日：2001-05-18

申请人： Keizo Hosoda ,  Yusuke Muraki

发明人： Keizo Hosoda ,  Yusuke Muraki

IPC分类号： H01L218242

CPC分类号： H01L21/02356 ,  C23C16/405 ,  C23C16/56 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31604 ,  H01L28/40

摘要： A tantalum oxide film is formed on a lower conductive film by vapor-deposition, and then is treated with active oxygen species. The treated film is annealed at a temperature lower than the crystallization temperature of tantalum oxide by 10 to 80° C. in an inert atmosphere. Subsequently, an upper conductive film is formed on the annealed tantalum oxide film.

摘要翻译： 通过气相沉积在下导电膜上形成氧化钽膜，然后用活性氧物质处理。 在惰性气氛下，将处理过的膜在比氧化钽的结晶温度低的温度下退火10〜80℃。 随后，在退火的氧化钽膜上形成上导电膜。

公开(公告)号：US20110035957A1

公开(公告)日：2011-02-17

申请号：US12439960

申请日：2007-12-20

申请人： Yusuke Muraki ,  Shigeki Tozawa

发明人： Yusuke Muraki ,  Shigeki Tozawa

IPC分类号： F26B25/00

CPC分类号： H01L21/31116 ,  H01L21/02057 ,  H01L21/67173 ,  H01L21/67742 ,  H01L21/67745 ,  H01L21/67748

摘要： A gas processing apparatus includes a chamber 40 configured to accommodate a wafer W; a transfer mechanism 17 configured to continuously transfer a plurality of wafers W one by one into the chamber 40; a gas supply mechanism configured to supply into the chamber 40 a process gas having a clinging property and prepared for performing a gas process on each of the wafers W; and a control section 90 preset to control the gas supply mechanism and the transfer mechanism to supply the process gas into the chamber before transferring a first target object into the chamber, and then to transfer the first target object into the chamber after the elapse of a predetermined time.

摘要翻译： 气体处理装置包括：构造成容纳晶片W的室40; 传送机构17，被配置为将多个晶片W一个一个地连续地传送到室40中; 气体供给机构，其构造成向所述室40供给具有附着性并且准备用于对所述晶片W进行气体处理的处理气体; 以及控制部90，用于控制气体供给机构和传送机构，以在将第一目标物体转移到室内之前将处理气体供给到室中，然后在经过了第一目标物体之后将第一目标物体转移到室中 预定时间

公开(公告)号：US20100216296A1

公开(公告)日：2010-08-26

申请号：US12084132

申请日：2006-10-20

申请人： Yusuke Muraki ,  Shigeki Tozawa ,  Takehiko Orii

发明人： Yusuke Muraki ,  Shigeki Tozawa ,  Takehiko Orii

IPC分类号： H01L21/20 ,  H01L21/306

CPC分类号： H01L29/165 ,  H01L21/02057 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

摘要： [Object] To provide a processing method capable of removing an oxide film adhering on a Si layer from the Si layer without adversely affecting parts other than the oxide film and capable of surely forming a SiGe layer with good film quality without roughening the crystal structure of a surface of the Si layer from which the oxide film has been removed, and to provide a recording medium.[Means for Solving the Problems] A processing method for removing an oxide film growing on a surface of a Si layer, and forming a SiGe layer on the surface of the exposed Si layer includes: supplying gas containing a halogen element and basic gas to the surface of the Si layer, and causing the oxide film growing on the surface of the Si layer to chemically react with the gas containing the halogen element and the basic gas to turn the oxide film into a reaction product; removing the reaction product by heating; and thereafter forming the SiGe layer on the surface of the exposed Si layer.

摘要翻译： 本发明提供一种能够从Si层除去附着在Si层上的氧化膜的处理方法，而不会不利地影响氧化膜以外的部分，并且能够确保形成具有良好膜质量的SiGe层，而不会使晶体结构变粗糙 已经除去氧化膜的Si层的表面，并提供记录介质。 解决问题的手段用于去除在Si层表面生长的氧化膜并在暴露的Si层的表面上形成SiGe层的处理方法包括：将含有卤素元素和碱性气体的气体供给到 使Si层表面生长的氧化膜与含有卤素元素和碱性气体的气体发生化学反应，将氧化膜转化成反应产物; 通过加热除去反应产物; 然后在暴露的Si层的表面上形成SiGe层。

公开(公告)号：US20080254636A1

公开(公告)日：2008-10-16

申请号：US12078958

申请日：2008-04-08

申请人： Shigeki Tozawa ,  Yusuke Muraki

发明人： Shigeki Tozawa ,  Yusuke Muraki

IPC分类号： H01L21/306

CPC分类号： H01L21/31138 ,  H01L21/67069 ,  H01L21/67155

摘要： An etching method includes preparing a target object such that a first oxide film made of silicon oxide containing at least one of B and P is formed on a substrate, a second oxide film made of silicon oxide containing neither of B and P is formed on the first oxide film, and a contact portion is present below an interface between the first oxide film and the second oxide film. The etching method further includes etching the second oxide film and the first oxide film, thereby forming a hole reaching the contact portion, and etching the first oxide film by a dry process using a gas containing HF, thereby expanding a portion of the hole adjacent to an upper side of the contact portion and inside the first oxide film.

摘要翻译： 蚀刻方法包括制备目标物体，使得在基板上形成由含有B和P中的至少一个的氧化硅制成的第一氧化物膜，在不含有B和P的氧化硅中形成的第二氧化物膜形成在 第一氧化物膜和接触部分存在于第一氧化物膜和第二氧化物膜之间的界面之下。 蚀刻方法还包括蚀刻第二氧化物膜和第一氧化物膜，从而形成到达接触部分的孔，并且通过使用含有HF的气体的干法来蚀刻第一氧化物膜，从而使孔的一部分与 接触部分的上侧和第一氧化膜内部。

公开(公告)号：US20080134663A1

公开(公告)日：2008-06-12

申请号：US11885339

申请日：2006-03-01

申请人： Tsuyoshi Totani ,  Yusuke Muraki ,  Chihiro Takano

发明人： Tsuyoshi Totani ,  Yusuke Muraki ,  Chihiro Takano

IPC分类号： F03H1/00

CPC分类号： F02K9/60 ,  B64G1/406 ,  F02K9/42 ,  F02K9/52 ,  F02K9/62 ,  F03H99/00 ,  F05D2260/20 ,  F23D11/448 ,  Y02E10/46

摘要： A heat transfer thruster by which performance can be enhanced by realizing optimal temperature distribution for heating propellant without complicating the structure. In the heat transfer thruster, propellant flows through two pipes (102, 104) into the thruster body (106) thence flows through a channel (110) formed in the thruster body (106) to the nozzle side while being heated from the thruster body (106) which is heated by a heat source, and reaches a plenum chamber (114) in front of a nozzle before being injected from a propellant outlet along the outer wall (126) of a plug nozzle (112). Heat from the heat source is transmitted directly to the nozzle through the inner wall (128) of the plug nozzle (112). In other words, the hollow section (118) of the plug nozzle (112) functions as a heating section for the nozzle.

摘要翻译： 一种传热推进器，通过实现最佳的温度分布来加热推进剂，可以提高性能，而不会使结构复杂化。 在传热推进器中，推进剂通过两个管（102,104）进入推进器主体（106），从而将形成在推进器主体（106）中的通道（110）流动到喷嘴侧，同时从推进器主体 （106），其被热源加热，并且在从推进剂出口沿着喷嘴（112）的外壁（126）喷射之前到达喷嘴前面的增压室（114）。 来自热源的热量通过塞子喷嘴（112）的内壁（128）直接传递到喷嘴。 换句话说，塞子喷嘴（112）的中空部（118）用作喷嘴的加热部。