发明授权
- 专利标题： Reliable adhesion layer interface structure for polymer memory electrode and method of making same
- 专利标题（中）： 聚合物记忆电极的可靠粘附层界面结构及其制备方法
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申请号： US09909375申请日： 2001-07-20
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公开(公告)号： US06798003B2公开(公告)日： 2004-09-28
- 发明人: Jian Li , Xiao-Chun Mu
- 申请人： Jian Li , Xiao-Chun Mu
- 主分类号： H01L4700
- IPC分类号： H01L4700
摘要：
A polymer memory device includes two organic adhesion layers that facilitate an integral package comprising a lower and an upper electrode and the ferroelectric polymer memory structure. The ferroelectric polymer memory structure includes crystalline ferroelectric polymer layers such as single and co-polymer compositions. The structure includes spin-on and/or Langmuir-Blodgett deposited compositions. A memory system allows the polymer memory device to interface with various existing hosts.