发明授权
US06798798B2 Semiconductor laser apparatus and fabrication method of same, and semiconductor laser module 有权
半导体激光装置及其制造方法,以及半导体激光模块

  • 专利标题: Semiconductor laser apparatus and fabrication method of same, and semiconductor laser module
  • 专利标题(中): 半导体激光装置及其制造方法,以及半导体激光模块
  • 申请号: US09758963
    申请日: 2001-01-10
  • 公开(公告)号: US06798798B2
    公开(公告)日: 2004-09-28
  • 发明人: Junji YoshidaNaoki TsukijiToshio Kimura
  • 申请人: Junji YoshidaNaoki TsukijiToshio Kimura
  • 优先权: JP2000-378103 20001212
  • 主分类号: H01S313
  • IPC分类号: H01S313
Semiconductor laser apparatus and fabrication method of same, and semiconductor laser module
摘要:
A cavity length is determined on the basis of a relationship of electric drive power to a range of optical output power over 50 mW, for cavity length to be constant as a parameter in a range over 1000 &mgr;m, so that the electric drive power is vicinal to a minimum thereof in correspondence to a desirable optical output power. If the optical output is 360 mW for example, a cavity length of 1500 &mgr;m is determined to be selected.
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