摘要:
A single semiconductor laser device used in a semiconductor laser module of an optical amplifier and having a first light emitting stripe with a diffraction grating and at least one other light emitting stripe with a diffraction grating and which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface.
摘要:
A semiconductor laser device having two active-layer stripe structures includes an n-InP substrate, an n-InP clad layer, a lower GRIN-SCH layer, an active layer, an upper GRIN-SCH layer, a p-InP clad layer, and a p-InGaAsP contact layer grown in this order, in a side cross section cut along one of the stripe structure. A high-reflection film is disposed on a reflection-side end surface, and a low-reflection film is disposed on an emission-side end surface. A p-side electrode is disposed on only a part of the upper surface of the p-InGaAsP contact layer so that a current non-injection area is formed on an area absent the p-side electrode.
摘要:
A semiconductor laser module has a Fabry-Perot type semiconductor laser device, an optical fiber, and first and second lenses. The tip of the optical fiber, on which the laser beam falls, is askew polished. The optical fiber is fixed in such a manner that the axis of the optical fiber makes an angle with respect to an optical axis of the laser beam. Coatings that avoid reflection are formed on the tip of the optical fiber, and on the first and second lenses.
摘要:
An n-side electrode, an n-substrate, an n-buffer layer, a GRIN-SCH-MQW active layer, a p-spacer, a p-cladding layer, a p-contact layer, and a p-side electrode are laminated one on top another in that order. Above the n-buffer layer, the GRIN-SCH-MQW layer and the p-spacer layer occupy a narrower area than the n-substrate in a direction that is at right angles to the laser emission direction, wherein the remaining area is occupied by a p-blocking layer and an n-blocking layer. Within the p-spacer layer are embedded a first diffraction grating and a second diffraction grating. Between the first and the second diffraction grating and the p-side electrode is provided a current non-injection area.
摘要:
In the semiconductor laser device of the present invention, a semiconductor stacked structure including an active layer comprising a strained multi-quantum well structure is formed on a substrate 1, a cavity length is larger than 1000 &mgr;m but equal to or smaller than 1800 &mgr;m, and a low-reflection film S1 having a reflectance of 3% or less is formed on one facet and a high-reflection film S2 having a reflectance of 90% or more is formed on the other facet. The semiconductor laser module has a structure in which the semiconductor laser device is set to a cooling device constituted by electrically alternately arranging 40 pairs or more of the Peltier elements and holding them by top and bottom ceramic plates and sealed in the package. A grating having a reflection bandwidth of 1.5 nm or less is formed on an optical fiber to be built in.
摘要:
A semiconductor laser module including a semiconductor laser device having an integrated diffraction grating configured to output a multiple mode laser beam in the presence of a driving current, an optical fiber configured to guide the multiple mode laser beam to an output of the laser module, and an optical attenuation device configured to attenuate the multiple mode laser beam by an amount sufficient to provide a predetermined output power from the output of the laser module. The optical attenuation device may be an optical coupling lens offset from an optimum coupling position by an amount sufficient to provide the predetermined output power, or an optical attenuator interrupting the optical fiber and configured to attenuate the multiple mode laser beam by an amount sufficient to provide the predetermined output power. Also, a two fiber Raman amplifier having a super large area (SLA) fiber that provides amplification of the signal based primarily on the forward excitation light can also be used to suppress SBS.
摘要:
A cavity length is determined on the basis of a relationship of electric drive power to a range of optical output power over 50 mW, for cavity length to be constant as a parameter in a range over 1000 &mgr;m, so that the electric drive power is vicinal to a minimum thereof in correspondence to a desirable optical output power. If the optical output is 360 mW for example, a cavity length of 1500 &mgr;m is determined to be selected.
摘要:
A semiconductor laser module includes a single semiconductor laser device having a first light emitting stripe and at least one other light emitting stripe which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface. It also includes a first lens positioned so that the first laser beam and the at least one other laser beam emitted from the semiconductor laser device are incident thereon, the first lens configured to separate the first laser beam and the at least one other laser beam. A beam synthesizing member is included and has a first input part on which the first laser beam is incident, at least one other input part on which the at least one other laser beam is incident, and an output part from which the first laser beam emerging from the first input part and the at least one other laser beam emerging from the at least one other input part are multiplexed and emitted as a multiplexed laser beam. An optical fiber is positioned to receive the multiplexed laser beam therein.
摘要:
An n-Inp buffer layer, a GRIN-SCH-MQW active layer, and a p-InP spacer layer are laminated on an n-InP substrate. A p-InP blocking layer and an n-InP blocking layer are provided to be adjacent to an upper region of the n-InP buffer layer, the GRIN-SCH-MQW active layer and the p-InP spacer layer. A p-InP cladding layer, a p-GaInAsP contact layer, and a p-side electrode are laminated on the p-InP spacer layer and the n-InP blocking layer, and an n-side electrode is arranged on a rear surface of the n-InP substrate. A diffraction grating that selects light having the number of oscillation longitudinal modes of not less than 10, more preferably not less than 18, oscillation longitudinal modes the difference values of which in optical intensity from the oscillation longitudinal mode having the highest optical intensity are not more than 10 dB, is arranged in the p-InP spacer layer.
摘要:
A semiconductor laser device which has a diffraction grating partially provided in the vicinity of an active layer formed between a radiation-side reflection film provided on a radiation-side end surface of a laser beam and a reflection film provided on a reflection-side end surface of the laser beam, and which outputs a laser beam having a desired oscillation longitudinal mode based on a wavelength selection characteristic of at least the diffraction grating. The diffraction grating is formed in isolation with an isolation distance of Ls=15 μm from the radiation-side reflection film.