Power switching transistor and method of manufacture for a fluid ejection device

发明授权

US06800497B2 Power switching transistor and method of manufacture for a fluid ejection device 失效

标题翻译：一种用于流体喷射装置的功率开关晶体管及其制造方法

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专利标题： Power switching transistor and method of manufacture for a fluid ejection device
专利标题（中）： 一种用于流体喷射装置的功率开关晶体管及其制造方法
申请号： US10135600

申请日： 2002-04-30
公开(公告)号： US06800497B2

公开(公告)日： 2004-10-05
发明人: Stanley J. Wang , George H. Corrigan , Tim R. Koch
申请人： Stanley J. Wang , George H. Corrigan , Tim R. Koch
主分类号： H01L2100
IPC分类号： H01L2100

Power switching transistor and method of manufacture for a fluid ejection device

摘要：

A method of manufacturing a power switching transistor for a fluid ejection device includes forming a first conductivity type region and a first diffused region within the first conductivity type region. The first diffused region has a first conductivity type and has a greater impurity concentration than the first conductivity type region. A gate is formed and is defined to have a thin oxide region and a thick oxide region. The thick oxide region and a first portion of the thin oxide region are disposed over the first conductivity type region and the thin oxide region is at a defined distance from the first diffused region.

摘要（中）：

一种制造用于流体喷射装置的功率开关晶体管的方法包括在第一导电类型区域内形成第一导电类型区域和第一扩散区域。第一扩散区域具有第一导电类型并且具有比第一导电类型区域更大的杂质浓度。形成栅极并将其限定为具有薄的氧化物区域和厚的氧化物区域。厚氧化物区域和薄氧化物区域的第一部分设置在第一导电类型区域上方，并且薄氧化物区域距离第一扩散区域确定的距离。

公开/授权文献

US20030202023A1 Power switching transistor and method of manufacture for a fluid ejection device 公开/授权日：2003-10-30

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