发明授权
- 专利标题： Method of manufacturing electron emitting device
- 专利标题（中）： 制造电子发射器件的方法
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申请号： US09332101申请日： 1999-06-14
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公开(公告)号： US06802752B1公开(公告)日： 2004-10-12
- 发明人: Toshikazu Ohnishi , Masato Yamanobe , Ichiro Nomura , Hidetoshi Suzuki , Yoshikazu Banno , Takeo Ono , Masanori Mitome
- 申请人： Toshikazu Ohnishi , Masato Yamanobe , Ichiro Nomura , Hidetoshi Suzuki , Yoshikazu Banno , Takeo Ono , Masanori Mitome
- 优先权： JP5-331103 19931227; JP5-335925 19931228; JP6-137317 19940620
- 主分类号： H01J902
- IPC分类号： H01J902
摘要：
An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.