发明授权
US06806114B1 Broadly tunable distributed bragg reflector structure processing 失效
广泛可调的分布式布拉格反射器结构处理

  • 专利标题: Broadly tunable distributed bragg reflector structure processing
  • 专利标题(中): 广泛可调的分布式布拉格反射器结构处理
  • 申请号: US10039526
    申请日: 2001-11-07
  • 公开(公告)号: US06806114B1
    公开(公告)日: 2004-10-19
  • 发明人: Yu-Hwa Lo
  • 申请人: Yu-Hwa Lo
  • 主分类号: H01L2100
  • IPC分类号: H01L2100
Broadly tunable distributed bragg reflector structure processing
摘要:
A process for creating a broadly tunable Distributed Bragg Reflector (DBR) with a reduced recombination rate. According to the current invention, this may be achieved by creating electron confinement regions and hole confinement regions in the waveguide of the DBR. Preferably, this is achieved by engineering the band gaps of the DBR waveguide and cladding materials. Preferably, the materials selected for use in the DBR may be lattice matched. Alternately, two or more thin electron confinement regions and two or more thin hole confinement regions may be created to take advantage of strain compensation in thinner layers thereby broadening the choices of materials appropriate for use in creating a broadly tunable DBR. Alternately, graded materials and/or graded interfaces may be created according to alternate processes according to the current invention to provide effective electron and/or hole confinement regions in various DBR designs.
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