A method for forming a vertical nitride read-only memory cell. A substrate having at least one trench is provided. A first conductive layer is formed in the lower trench and insulated from the substrate to serve as a source line. A first doping region is formed in the substrate adjacent to the top of the first conductive layer. A first insulating layer is formed on the first conductive layer. A second doping region is formed in the substrate adjacent to the top of the trench. A second insulating layer is formed over the sidewall of the trench and on the first insulating layer to serve as a gate dielectric layer. A second conductive layer is formed in the upper trench to serve as a control gate. A vertical nitride read-only memory cell is also disclosed.