发明授权
- 专利标题： Selective deposition of a barrier layer on a metal film
- 专利标题（中）： 在金属膜上选择性地沉积阻挡层
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申请号： US10322345申请日： 2002-12-18
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公开(公告)号： US06809026B2公开(公告)日： 2004-10-26
- 发明人: Hyungsuk Alexander Yoon , Michael X. Yang , Hui Zhang , Soonil Hong , Ming Xi
- 申请人： Hyungsuk Alexander Yoon , Michael X. Yang , Hui Zhang , Soonil Hong , Ming Xi
- 主分类号： H01L214763
- IPC分类号： H01L214763
摘要：
A method to selectively deposit a barrier layer on a metal film formed on a substrate is disclosed. The barrier layer is selectively deposited on the metal film using a cyclical deposition process including a predetermined number of deposition cycles followed by a purge step. Each deposition cycle comprises alternately adsorbing a refractory metal-containing precursor and a reducing gas on the metal film formed on the substrate in a process chamber.
公开/授权文献
- US20030181035A1 Selective deposition of abarrier layer on a metal film 公开/授权日：2003-09-25
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