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    FORMATION OF A TANTALUM-NITRIDE LAYER
    2.
    发明申请
    FORMATION OF A TANTALUM-NITRIDE LAYER 失效
    形成氮化钛层

    公开(公告)号：US20100311237A1

    公开(公告)日：2010-12-09

    申请号：US12846253

    申请日：2010-07-29

    Applicant: Sean M. Seutter ,  Michael X. Yang ,  Ming Xi

    Inventor： Sean M. Seutter ,  Michael X. Yang ,  Ming Xi

    IPC: H01L21/44 ,  H01L21/4763

    CPC classification number: C23C16/45553 ,  C23C16/34 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76844 ,  H01L21/76862

    Abstract: A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process. A metal-containing layer is subsequently deposited on the tantalum nitride layer.

    Abstract translation: 公开了一种在基片上形成材料的方法。 在一个实施例中，该方法包括在设置在等离子体处理室中的衬底上形成氮化钽层，通过将衬底顺序地暴露于钽前体和氮前体，然后通过暴露衬底来降低氮化钽层的氮浓度 等离子体退火工艺。 随后在氮化钽层上沉积含金属的层。

    Method to deposit organic grafted film on barrier layer
    3.
    发明授权
    Method to deposit organic grafted film on barrier layer 有权
    将有机接枝膜沉积在阻挡层上的方法

    公开(公告)号：US07820026B2

    公开(公告)日：2010-10-26

    申请号：US11403566

    申请日：2006-04-13

    Applicant: Hooman Hafezi ,  Aron Rosenfeld ,  Michael X. Yang

    Inventor： Hooman Hafezi ,  Aron Rosenfeld ,  Michael X. Yang

    IPC: C25D5/34

    CPC classification number: H01L21/76868 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76873

    Abstract: Generally, the process includes depositing a barrier layer on a feature formed in a dielectric layer, decorating the barrier layer with a metal, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier layer formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate.

    Abstract translation: 通常，该方法包括在形成在电介质层中的特征上沉积阻挡层，用金属装饰阻挡层，进行接枝过程，引发铜层，然后通过使用大块铜填充工艺来填充该特征。 根据本文描述的方面形成的铜特征对于形成在半导体衬底上的阻挡层具有期望的粘合性能，并且证明在形成在衬底上的制造器件中增强的电迁移和应力迁移。

    MATERIAL MODIFICATION IN SOLAR CELL FABRICATION WITH ION DOPING
    4.
    发明申请
    MATERIAL MODIFICATION IN SOLAR CELL FABRICATION WITH ION DOPING 审中-公开
    太阳能电池制造中的物质改性与离子掺杂

    公开(公告)号：US20090162970A1

    公开(公告)日：2009-06-25

    申请号：US11961126

    申请日：2007-12-20

    Applicant: Michael X. Yang

    Inventor： Michael X. Yang

    IPC: H01L31/0368 ,  H01L31/0376

    CPC classification number: H01L31/1868 ,  H01L31/046 ,  Y02E10/50 ,  Y02P70/521

    Abstract: An approach for material modification in solar cell fabrication with ion doping is described. In one embodiment, there is a method of forming a thin-film solar cell. In this embodiment, a substrate is provided and a thin-film layer is deposited on the substrate. The thin-film solar cell layer is exposed to an ion flux to passivate a defect.

    Abstract translation: 描述了一种用于具有离子掺杂的太阳能电池制造中材料修饰的方法。 在一个实施例中，存在形成薄膜太阳能电池的方法。 在本实施例中，提供基板并且在基板上沉积薄膜层。 薄膜太阳能电池层暴露于离子通量以钝化缺陷。

    PLASMA-ENHANCED CYCLIC LAYER DEPOSITION PROCESS FOR BARRIER LAYERS
    6.
    发明申请
    PLASMA-ENHANCED CYCLIC LAYER DEPOSITION PROCESS FOR BARRIER LAYERS 失效
    梯度层的等离子体增强循环层析沉积过程

    公开(公告)号：US20090111264A1

    公开(公告)日：2009-04-30

    申请号：US12348671

    申请日：2009-01-05

    Applicant: MICHAEL X. YANG ,  Toshio Itoh ,  Ming Xi

    Inventor： MICHAEL X. YANG ,  Toshio Itoh ,  Ming Xi

    IPC: H01L21/443

    CPC classification number: C23C16/45531 ,  C23C16/06 ,  C23C16/34 ,  C23C16/42 ,  C23C16/452 ,  C23C16/45529 ,  C23C16/45542 ,  C23C16/45565 ,  C23C16/5096 ,  C23C16/515 ,  C23C16/54 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/02153 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76856

    Abstract: In one embodiment, a method for depositing materials on a substrate is provided which includes forming a titanium nitride barrier layer on the substrate by sequentially exposing the substrate to a titanium precursor containing a titanium organic compound and a nitrogen plasma formed from a mixture of nitrogen gas and hydrogen gas. In another embodiment, the method includes exposing the substrate to the deposition gas containing the titanium organic compound to form a titanium-containing layer on the substrate, and exposing the titanium-containing layer disposed on the substrate to a nitrogen plasma formed from a mixture of nitrogen gas and hydrogen gas. The method further provides depositing a conductive material containing tungsten or copper over the substrate during a vapor deposition process. In some examples, the titanium organic compound may contain methylamido or ethylamido, such as tetrakis(dimethylamido)titanium, tetrakis(diethylamido)titanium, or derivatives thereof.

    Abstract translation: 在一个实施例中，提供了一种用于在衬底上沉积材料的方法，其包括通过将衬底依次暴露于含有钛有机化合物的钛前体和由氮气混合物形成的氮等离子体而在衬底上形成氮化钛阻挡层 和氢气。 在另一个实施方案中，该方法包括将衬底暴露于含有钛有机化合物的沉积气体，以在衬底上形成含钛层，并将设置在衬底上的含钛层暴露于由 氮气和氢气。 该方法进一步提供在气相沉积工艺期间在衬底上沉积含有钨或铜的导电材料。 在一些实例中，钛有机化合物可以含有甲基酰氨基或乙酰氨基，例如四（二甲基氨基）钛，四（二乙基氨基）钛或其衍生物。

    Multi-zone resistive heater
    10.
    发明授权
    Multi-zone resistive heater 有权

    公开(公告)号：US06423949B1

    公开(公告)日：2002-07-23

    申请号：US09314845

    申请日：1999-05-19

    Applicant: Steven Aihua Chen ,  Henry Ho ,  Michael X. Yang ,  Bruce W. Peuse ,  Karl Littau ,  Yu Chang

    Inventor： Steven Aihua Chen ,  Henry Ho ,  Michael X. Yang ,  Bruce W. Peuse ,  Karl Littau ,  Yu Chang

    IPC: H05B368

    CPC classification number: H01L21/67103

    Abstract: A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

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