发明授权
- 专利标题: Spacer structure having a surface which can reduce secondaries
- 专利标题(中): 间隔结构具有可以减少二次的表面
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申请号: US09413774申请日: 1999-10-07
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公开(公告)号: US06809469B1公开(公告)日: 2004-10-26
- 发明人: Nobuhiro Ito , Hideaki Mitsutake
- 申请人: Nobuhiro Ito , Hideaki Mitsutake
- 优先权: JP10-285759 19981007; JP11-051547 19990226; JP11-283439 19991004
- 主分类号: H01J162
- IPC分类号: H01J162
摘要:
A spacer on which static electricity is restricted and an electron beam apparatus in which the spacer is provided. In the electron beam apparatus comprising an electron source provided with electron emission devices, a face plate provided with anodes and spacers installed between the electron source and the face plate, unevenness is formed on the surface of the spacer substrate, and further a thin film which has a smaller thickness than a roughness. This makes possible the restriction of incident angle multiplication coefficient for the primary electrons whose energy is lower than the second cross-point energy of a resistive film. The electron beam apparatus provided with the above spacer is excellent in display definition and long-term reliability since the displacement of light emission points and the creeping discharge accompanying the static electricity can be restricted due to the spacer.
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