- 专利标题： Magnetic storage apparatus having dummy magnetoresistive effect element and manufacturing method thereof
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申请号： US10406387申请日： 2003-04-04
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公开(公告)号： US06812511B2公开(公告)日： 2004-11-02
- 发明人: Kentaro Nakajima , Minoru Amano
- 申请人： Kentaro Nakajima , Minoru Amano
- 优先权： JP2002-104388 20020405; JP2003-072216 20030317
- 主分类号： H01L2976
- IPC分类号： H01L2976
摘要：
A magnetic memory device includes a memory cell portion, a peripheral circuit portion positioned in the vicinity of the memory cell portion, a plurality of first magnetoresistive effect elements which are arranged in the memory cell portion and function as memory elements, and a plurality of second magnetoresistive effect elements which are arranged in at least a part of the peripheral circuit portion and function as dummies, wherein a sum total of occupying areas of the second magnetoresistive effect elements is 5% to 80% of the peripheral circuit portion.
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