发明授权
US06815224B2 Low-temperature processing of a ferroelectric strontium bismuth tantalate layer, and fabrication of ferroelectric components using the layer 失效
铁电锶铋钽酸盐层的低温加工,以及使用该层的铁电元件的制造

Low-temperature processing of a ferroelectric strontium bismuth tantalate layer, and fabrication of ferroelectric components using the layer
摘要:
In a method for producing ferroelectric strontium bismuth tantalate having the composition SrxBiyTa2O9 (SBT) or SrxBiy(Ta, Nb)2O9 (SBTN), the element strontium, which is normally present in an amount y=2, is provided in excess in a range from 2.1≦y≦3.0. This makes it possible to carry out the heat treatment step for converting the deposited material into the ferroelectric phase at a temperature T1, which is lower than 700° C. In addition, the strontium content x can be reduced from a nominal value of 1 to 0.7.
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