A method of forming a gate in a FinFET device includes forming a fin on an insulating layer, forming source/drain regions and forming a gate oxide on the fin. The method also includes depositing a gate material over the insulating layer and the fin, depositing a barrier layer over the gate material and depositing a bottom anti-reflective coating (BARC) layer over the barrier layer. The method further includes forming a gate mask over the BARC layer, etching the BARC layer, where the etching terminates on the barrier layer, and etching the gate material to form the gate.