End point determination of process residues in wafer-less auto clean process using optical emission spectroscopy

发明授权

US06815362B1 End point determination of process residues in wafer-less auto clean process using optical emission spectroscopy 失效

标题翻译：使用光发射光谱法测定无晶圆自动清洁过程中的工艺残留物

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专利标题： End point determination of process residues in wafer-less auto clean process using optical emission spectroscopy
专利标题（中）： 使用光发射光谱法测定无晶圆自动清洁过程中的工艺残留物
申请号： US10138980

申请日： 2002-05-03
公开(公告)号： US06815362B1

公开(公告)日： 2004-11-09
发明人: Vincent Wong , Brett C. Richardson , Andrew Lui , Scott Baldwin
申请人： Vincent Wong , Brett C. Richardson , Andrew Lui , Scott Baldwin
主分类号： H01L21302
IPC分类号： H01L21302

End point determination of process residues in wafer-less auto clean process using optical emission spectroscopy

摘要：

A method for determining an endpoint of an in-situ cleaning process of a semiconductor processing chamber is provided. The method initiates with providing an optical emission spectrometer (OES) configured to monitor selected wavelength signals. Then, baseline OES threshold signal intensities are determined for each of the selected wavelength signals. Next, an endpoint time of each step of the in-situ cleaning process is determined. Determining an endpoint time includes executing a process recipe to process a semiconductor substrate within the processing chamber. Executing the in-situ cleaning process and recording the endpoint time for each step of the in-situ cleaning process are also included in determining the endpoint time. Then, nominal operating times are established for each step of the in-situ cleaning process. A plasma processing system for executing a two step in-situ cleaning process is also provided.

摘要（中）：

提供了一种用于确定半导体处理室的原位清洁过程的端点的方法。该方法通过提供被配置为监视所选波长信号的光发射光谱仪（OES）来启动。然后，为每个所选择的波长信号确定基线OES阈值信号强度。接下来，确定原位清洁过程的每个步骤的终点时间。确定端点时间包括执行处理处理室内的半导体衬底的处理配方。执行原位清洁过程并记录原位清洁过程的每个步骤的终点时间也包括在确定终点时间中。然后，为原位清洗过程的每个步骤建立标称操作时间。还提供了一种用于执行两步原位清洁处理的等离子体处理系统。

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