发明授权
- 专利标题： Semiconductor device and semiconductor substrate, and method of fabricating the same
- 专利标题（中）： 半导体器件和半导体衬底及其制造方法
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申请号： US10249116申请日： 2003-03-17
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公开(公告)号： US06815726B2公开(公告)日： 2004-11-09
- 发明人: Masahiro Ishida , Shinji Nakamura , Kenji Orita , Osamu Imafuji , Masaaki Yuri
- 申请人： Masahiro Ishida , Shinji Nakamura , Kenji Orita , Osamu Imafuji , Masaaki Yuri
- 优先权： JP10-259907 19980914; JP11-133844 19990514
- 主分类号： H01L2922
- IPC分类号： H01L2922
摘要：
A semiconductor device includes: a crystalline substrate including a primary surface and a crystal plane provided within the primary surface so as to have a surface orientation different from a surface orientation of the primary surface; a semiconductor layered structure grown over the crystalline substrate; and an active region provided at a portion in the semiconductor layer structure above the crystal plane.
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