发明授权
- 专利标题: Method of extending the areas of clear field phase shift generation
- 专利标题(中): 扩展清除场相移生成区域的方法
-
申请号: US10016439申请日: 2001-12-11
-
公开(公告)号: US06818358B1公开(公告)日: 2004-11-16
- 发明人: Todd P. Lukanc , Christopher A. Spence
- 申请人: Todd P. Lukanc , Christopher A. Spence
- 主分类号: G03F900
- IPC分类号: G03F900
摘要:
An exemplary Full Phase patterning method involves patterning gates to increase process margins from conventional methods. This technique can define all poly patterns with a phase mask, using only a field or trim mask to resolve conflicts in the phase mask. The trim mask exposes a series of lines that either separates the different phase areas where patterns not desired or minimizes the range of sizes of the phase patterns next to a critical gate area.