发明授权
US06821856B2 Method of manufacturing semiconductor device having source/drain regions included in a semiconductor layer formed over an isolation insulating film and a semiconductor device fabricated thereby
失效
制造包括在隔离绝缘膜上形成的半导体层中的源极/漏极区域的半导体器件的制造方法以及由此制造的半导体器件
- 专利标题: Method of manufacturing semiconductor device having source/drain regions included in a semiconductor layer formed over an isolation insulating film and a semiconductor device fabricated thereby
- 专利标题(中): 制造包括在隔离绝缘膜上形成的半导体层中的源极/漏极区域的半导体器件的制造方法以及由此制造的半导体器件
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申请号: US10188108申请日: 2002-07-03
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公开(公告)号: US06821856B2公开(公告)日: 2004-11-23
- 发明人: Takeshi Takagi
- 申请人: Takeshi Takagi
- 优先权: JP2001-202939 20010704
- 主分类号: H01L21336
- IPC分类号: H01L21336
摘要:
A semiconductor device comprises an Si substrate, an isolation insulating film formed on the Si substrate, an Si layer formed on the Si substrate, a gate oxide film formed on the Si layer, a gate electrode formed on the gate oxide film, a sidewall formed on the side face of the gate electrode, a gate silicide film formed on the gate electrode, source and drain regions formed at both the sides of the gate electrode and including a part of the Si layer, and a silicide film formed on the source and drain regions. Because the source and drain regions are formed on a layer-insulating film so as to be overlayed, it is possible to decrease the active region and cell area of a device. Thereby, a high-speed operation and high integration can be realized.
公开/授权文献
- US20030008452A1 Semiconductor device and its fabrication method 公开/授权日:2003-01-09