发明授权
- 专利标题： Semiconductor device and method of fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10077767申请日： 2002-02-20
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公开(公告)号： US06822279B2公开(公告)日： 2004-11-23
- 发明人: Shinya Soeda
- 申请人： Shinya Soeda
- 优先权： JP2001-270720 20010906
- 主分类号： H01L27108
- IPC分类号： H01L27108
摘要：
A semiconductor device has a semiconductor substrate and a resistor group and/or a signal interconnection layer in a region of the semiconductor substrate. A shielding layer is located above and/or below the region where the resistor group and/or the signal interconnection layer are located.
公开/授权文献
- US20030052352A1 Semiconductor device and method of fabricating the same 公开/授权日：2003-03-20
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